Mfr Part #:

IPD60R360P7S

Mfr Name: Infineon

The Infineon IPD60R360P7S is a 600V CoolMOS P7 series N-channel power MOSFET. It features low switching and conduction losses.

✓ Total Stock: 39,647 pcs

$ Price Range: $0.99

IPD60R360P7S Available from 4 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	27,333 pcs On Request	27333 pcs	On Request	1	On Request	On Request	20+	On Request	On Request
Risen Electronics ✓ Non-Authorised Inventory information	10,000 pcs On Request	10000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	1,570 pcs On Request	1570 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	744 pcs On Request	744 pcs	On Request	1	On Request	On Request	18+	On Request	On Request

IPD60R360P7S Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Gate Charge	13nC
Mounting Type	Surface Mount
SVHC Present	Not Present

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IPD60R360P7S Description

Short technical summary and product information.

The Infineon IPD60R360P7S is a 600V N-channel power MOSFET from the CoolMOS P7 series. This technology platform is designed for high voltage power MOSFETs according to the superjunction principle.

Key electrical specifications include a maximum Drain-Source Voltage (Vds) of 650V, a maximum On-Resistance (Rds(on)) of 360mΩ, and a typical Gate Charge (Qg) of 13nC. It also offers a pulsed drain current (ID,pulse) of 26A and output capacitance (Eoss) of 1.6µJ at 400V.

This MOSFET is suitable for hard and soft switching applications such as PFC and LLC stages due to its outstanding commutation ruggedness. It offers significant reduction in switching and conduction losses, leading to more efficient, compact, and cooler switching applications. The device exhibits excellent ESD robustness greater than 2kV (HBM).

The IPD60R360P7S is available in a PG-TO252-3 package, designed for surface mount applications. Its ease of use and fast design-in are facilitated by low ringing tendency and usage across PFC and PWM stages, simplifying thermal management.

IPD60R360P7S Quick Information

Product Type: MOSFET

Series: CoolMOS P7

Canonical Name: Infineon IPD60R360P7S N-channel Power MOSFET

Subcategory: N-Channel

IPD60R360P7S Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IPD60R360P7S Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD60R360P7S Features

600V CoolMOS P7 series N-channel MOSFET.
650V maximum Drain-Source Voltage.
360mΩ maximum On-Resistance.
13nC typical Gate Charge.
PG-TO252-3 surface mount package.

IPD60R360P7S Applications

Suitable for PFC and LLC stages.
Used in adapter and lighting applications.
Ideal for server and telecom power supplies.
Applicable for PC Silverbox designs.

IPD60R360P7S FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of the IPD60R360P7S?

650V.

What is the typical on-resistance?

360mΩ maximum.

What is the gate charge of this MOSFET?

13nC typical.

What package does the IPD60R360P7S come in?

PG-TO252-3 (DPAK) surface mount package.

What is the pulsed drain current rating?

26A.

What is the output capacitance energy at 400V?

1.6µJ.

What is the body diode dI/dt capability?

900A/µs.

IPD60R360P7S Alternate Parts

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AUIRF7665S2TR

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The Infineon AUIRF7665S2TR is an N-Channel MOSFET with a 100V drain-to-source voltage and a continuous drain current of 4.1A at 25°C (Ta). It features a low on-resistance of 62mOhm at 8.9A, 10V.

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IPD60R360P7