| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,630 pcs
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1630 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present |
The Infineon IPD60R360P7 is a 600V N-channel power MOSFET from the CoolMOS P7 series. This 7th generation technology is designed for high voltage power applications, offering a revolutionary approach based on the superjunction principle.
Key electrical characteristics include a maximum drain-source voltage of 650V, a maximum on-resistance of 360mOhm, and a typical gate charge of 13nC. It also features a pulsed drain current of 26A and an energy loss (Eoss) of 1.6µJ at 400V. The device includes an internal body diode and an integrated ESD diode, with excellent ESD robustness exceeding 2kV (HBM).
Designed for both hard and soft switching applications like PFC and LLC, the IPD60R360P7 offers significant reduction in switching and conduction losses, leading to more efficient, compact, and cooler systems. Its ease of use is enhanced by a low ringing tendency and outstanding body diode robustness against hard commutation.
The MOSFET is housed in a DPAK package suitable for surface mounting. It is fully qualified according to JEDEC for Industrial Applications.
The maximum drain-source voltage (VDS) at Tj,max is 650V.
The maximum on-resistance (RDS(on),max) is 360mOhm.
The typical gate charge (Qg,typ) is 13nC.
The IPD60R360P7 is supplied in a DPAK package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.