| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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600 pcs
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600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Wolfspeed C2M1000170D is a second-generation Silicon Carbide (SiC) MOSFET. This N-channel power MOSFET is rated for a drain-source voltage of 1700V and can handle a continuous drain current of 4.9A at 25°C.
Key electrical characteristics include a maximum Rds On of 1.1 Ohm at 2A and 20V Vgs, a gate threshold voltage of 2.4V maximum at 100µA, and a gate charge of 13nC at 20V Vgs. The device has a maximum gate-source voltage rating of 25V and a power dissipation of 69W.
Packaged in a TO-247-3 through-hole configuration, the C2M1000170D operates within a temperature range of -55°C to 150°C. Its SiC technology offers advantages in high-power switching applications.
This MOSFET is suitable for various industrial automation and power electronics applications where high voltage and efficient switching are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1700V.
TO-247-3.
-55°C to 150°C.
1.1 Ohm at Id = 2A, Vgs = 20V.
13nC at Vgs = 20V.
4.9A at case temperature 25°C.
69W.