| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,794 pcs
|
1794 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| SVHC Present |
The Infineon IMZ120R045M1 is a Silicon Carbide (SiC) Trench MOSFET from the CoolSiC™ family, rated for 1200V.
This MOSFET offers very low switching losses, a threshold-free on-state characteristic, and a wide gate-source voltage range. Its benchmark gate threshold voltage is 4.5V, with a 0V turn-off gate voltage capability. The device is designed for easy use and drive, featuring a sense (driver) source pin for enhanced control.
Key benefits include improved efficiency, enabling higher operating frequencies, and increased power density. It also contributes to reduced cooling efforts and system complexity. The commutation robust body diode is ready for synchronous rectification.
Potential applications span energy generation, such as solar string inverters and optimizers, as well as industrial power supplies like UPS and SMPS, and infrastructure charging solutions. The part is qualified for industrial applications according to JEDEC standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1200V.
52A at case temperature 25°C.
45mΩ at junction temperature 25°C, drain current 20A, gate-source voltage 15V.
4.5V typical.
PG-TO247-4.
Through hole.
175°C.
