FDPF10N60NZ
On Semiconductor
N-Channel MOSFET, 600V drain-source voltage, 10A drain current, 750mOhm on-resistance, TO-220F through-hole package.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,200 pcs
|
1200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Tape & Reel |
The IMYH200R100M1HXKSA1 is a silicon carbide (SiC) discrete MOSFET manufactured by Infineon Technologies. Categorized as a single FET within discrete semiconductor products, it is designed for power switching applications. The device is housed in a TO-247-4 through-hole package with four leads, offering a robust interface for printed circuit board mounting.
The part is listed as RoHS3 compliant, REACH unaffected, and carries a moisture sensitivity level of 1 (unlimited). These compliance characteristics support use in environmentally regulated electronic systems.
Silicon carbide (SiC) is a wide-bandgap semiconductor material that enables efficient power conversion. The TO-247-4 package is commonly used for high-power transistors where heat dissipation and structural integrity are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $18.18 | $18.18 |
| 10+ | $11.26 | $11.26 |
| 100+ | $10.48 | $10.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IMYH200R100M1HXKSA1 is available in a TO-247-4 through-hole package with four leads.
The part is listed as RoHS3 compliant.
The moisture sensitivity level is 1 (unlimited).
The part is listed as REACH unaffected.
