NTD5867NL-1G The ON Semiconductor NTD5867NL-1G is an N-Channel MOSFET with a 60V drain-to-source voltage and 20A continuous current capability. It is housed in an IPak package.
Mfr Part #:

NTD5867NL-1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTD5867NL-1G is an N-Channel MOSFET with a 60V drain-to-source voltage and 20A continuous current capability. It is housed in an IPak package.
✓ Total Stock: 251,664 pcs
$ Price Range: $0.99

NTD5867NL-1G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
239,500 pcs
239500 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
12,164 pcs
12164 pcs On Request 1 On Request On Request 14+ On Request On Request

NTD5867NL-1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTD5867NL-1G Description

Short technical summary and product information.

The NTD5867NL-1G from ON Semiconductor is a power MOSFET designed for various applications requiring efficient switching. This N-Channel MOSFET features a maximum drain-to-source voltage (Vdss) of 60V and can handle a continuous drain current of 20A at 25°C case temperature.

 

Key electrical characteristics include a low on-resistance (Rds(on)) of 39mOhm maximum at 10A and 10V gate-to-source voltage, and 50mOhm maximum at 10A and 4.5V gate-to-source voltage. The gate threshold voltage (Vgs(th)) is typically 1.8V at 250µA. It also offers a high current capability and is 100% avalanche tested.

 

This device is available in a TO-251-3 Short Leads, IPak package, suitable for through-hole mounting. The operating junction and storage temperature range is -55°C to 150°C. It is designed to be Pb-Free and Halogen Free, complying with RoHS standards.

NTD5867NL-1G Quick Information

Product Type: MOSFET
Series: NTD5867NL-1G
Canonical Name: NTD5867NL-1G N-Channel MOSFET
Subcategory: Single

NTD5867NL-1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTD5867NL-1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTD5867NL-1G Features

  • 60V drain-to-source voltage capability.
  • 20A continuous drain current rating.
  • Low Rds(on) of 39mOhm max at 10A/10V.
  • TO-251-3 (IPak) through-hole package.
  • Pb-Free and Halogen Free construction.

NTD5867NL-1G Applications

  • Suitable for power switching circuits.
  • Used in DC-DC converter designs.
  • Applicable for load management.
  • Ideal for motor control circuits.

NTD5867NL-1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the operating voltage for the NTD5867NL-1G?

The drain-to-source voltage (Vdss) for the NTD5867NL-1G is 60V.

What package type is the NTD5867NL-1G MOSFET?

The NTD5867NL-1G is supplied in a TO-251-3 Short Leads, IPak package.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 150°C.

Is the NTD5867NL-1G RoHS compliant?

Yes, the NTD5867NL-1G is RoHS3 Compliant.

What is the maximum Rds On for the NTD5867NL-1G?

The maximum Rds On is 39mOhm at 10A and 10V, and 50mOhm at 10A and 4.5V.

What is the continuous drain current capability?

The continuous drain current is 20A at 25°C case temperature and 13A at 100°C case temperature.

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