| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
261,000 pcs
|
261000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVH4L022N120M3S from On Semiconductor is a high-performance Silicon Carbide (SiC) N-Channel MOSFET designed for demanding applications. It offers a robust 1200V drain-to-source voltage rating and a low typical on-resistance of 22 mOhm at 18V gate-to-source voltage.
Key electrical characteristics include an ultra-low total gate charge of 137 nC and a low output capacitance of 146 pF, enabling high-speed switching with reduced losses. The device is 100% avalanche tested and AEC-Q101 qualified, ensuring reliability.
This MOSFET is packaged in a TO-247-4L through-hole package, suitable for power applications. Its operating temperature range is -55°C to 175°C (TJ), with a maximum power dissipation of 352W at 25°C case temperature.
Typical applications include automotive on-board chargers and DC-DC converters for electric and hybrid vehicles, leveraging the advantages of SiC technology for improved efficiency and performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage rating is 1200 V.
The typical on-resistance is 22 mOhm at 18 V gate-to-source voltage.
The device is supplied in a TO-247-4L package.
The operating junction and storage temperature range is -55°C to 175°C.
The device is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.