2N7000BU 2N7000BU is an N-Channel MOSFET from On Semiconductor with 60V drain-source voltage and 200mA continuous drain current. It comes in a through-hole TO-92-3 package.
Mfr Part #:

2N7000BU

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
2N7000BU is an N-Channel MOSFET from On Semiconductor with 60V drain-source voltage and 200mA continuous drain current. It comes in a through-hole TO-92-3 package.
✓ Total Stock: 201,859 pcs
$ Price Range: $0.15 - $0.52

2N7000BU Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
158,520 pcs
158520 pcs On Request 1 On Request On Request 19+ On Request On Request
Non-Authorised Inventory information
43,339 pcs
43339 pcs On Request 1 On Request On Request On Request On Request On Request

2N7000BU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

2N7000BU Description

Short technical summary and product information.

The 2N7000BU is an N-Channel enhancement-mode MOSFET manufactured by On Semiconductor. It features a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 200mA at case temperature (Tc). The device has a maximum on-resistance (Rds(on)) of 5 Ohms at Vgs=10V and Id=500mA, making it suitable for low-power switching and signal-level applications.

 

The gate threshold voltage (Vgs(th)) is typically 3V at Id=1mA, with a maximum gate-source voltage rating of ±20V. Input capacitance (Ciss) is 50pF at Vds=25V, indicating low gate drive requirements. The MOSFET is housed in a TO-226-3 (TO-92-3) through-hole package, which is widely used for discrete semiconductors. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 400mW at ambient temperature.

 

This component is commonly used in low-voltage load switching, DC-DC converter auxiliary circuits, and logic-level interfacing. Its through-hole package facilitates easy prototyping and manual assembly. The device is RoHS3 compliant and has an MSL rating of 1 (unlimited), though these compliance claims are unverified.

2N7000BU Quick Information

Product Type: MOSFET
Canonical Name: 2N7000BU N-Channel MOSFET
Subcategory: N-Channel MOSFET

2N7000BU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2N7000BU Estimated Pricing

Qty Low High
1+ $0.52 $0.52
10+ $0.32 $0.32
100+ $0.20 $0.20
500+ $0.15 $0.15

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N7000BU Features

  • N-Channel enhancement-mode MOSFET.
  • 60V drain-source voltage rating.
  • 200mA continuous drain current.
  • 5 Ohm maximum on-resistance.
  • Through-hole TO-92-3 package.

2N7000BU Applications

  • Low-power load switching circuits.
  • Signal level shifting applications.
  • General purpose switching up to 200mA.
  • DC-DC converter auxiliary functions.

2N7000BU FAQs

5 frequently asked questions generated from this part’s specifications.
What is the operating temperature range of the 2N7000BU?

The operating junction temperature range is -55°C to 150°C.

What package does the 2N7000BU come in?

It is available in a TO-226-3 (TO-92-3) through-hole package.

Is the 2N7000BU RoHS compliant?

The part is listed as RoHS3 Compliant, but this status is unverified.

What is the maximum drain-source voltage for the 2N7000BU?

The maximum drain-to-source voltage (Vdss) is 60V.

What is the gate threshold voltage of the 2N7000BU?

The maximum gate threshold voltage is 3V at Id=1mA.

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