IRF1404PBF
Infineon
The Infineon IRF1404PBF is an N-channel HEXFET Power MOSFET designed for efficiency and reliability. It offers a 40V drain-to-source breakdown voltage and a continuous drain current of 202A.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,292 pcs
|
2292 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Style | |
| Mounting Type | |
| SVHC Present | |
| Storage Temperature |
The Infineon IKP30N65H5 is a high-speed 650V Insulated Gate Bipolar Transistor (IGBT) from the TRENCHSTOP™ 5 technology series. It offers best-in-class efficiency in hard switching and resonant topologies.
Key electrical specifications include a 650V breakdown voltage and a continuous collector current of 30A at 25°C. The typical collector-emitter saturation voltage is 1.65V at 25°C. The maximum junction temperature is rated at 175°C, ensuring reliability under demanding conditions.
This IGBT is copacked with a RAPID 1 fast and soft antiparallel diode. It features low gate charge (Qg) and is qualified according to JEDEC for target applications. The component is RoHS compliant with Pb-free lead plating.
The IKP30N65H5 is supplied in a PG-TO220-3 package suitable for through-hole mounting. Its applications include solar converters, uninterruptible power supplies, welding converters, and mid-to-high range switching frequency converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.63 | $3.63 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage is 650V.
The continuous collector current is 30A at 25°C.
The typical collector-emitter saturation voltage is 1.65V at 25°C.
The maximum junction temperature is 175°C.
It is supplied in a PG-TO220-3 package.
Yes, it is RoHS3 Compliant.
