IKW50N60DTP The Infineon IKW50N60DTP is a DuoPack IGBT and diode featuring TRENCHSTOP™ Performance technology. It offers a 600V collector-emitter voltage and 50A continuous collector current.
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IKW50N60DTP

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon IKW50N60DTP is a DuoPack IGBT and diode featuring TRENCHSTOP™ Performance technology. It offers a 600V collector-emitter voltage and 50A continuous collector current.
Total Stock: 1,696 pcs
$ Price Range: $3.63

IKW50N60DTP Available from 1 distributor

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IKW50N60DTP Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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IKW50N60DTP Description

Short technical summary and product information.

The Infineon IKW50N60DTP is a high-speed IGBT from the TRENCHSTOP™ Performance series, utilizing Trench and Fieldstop technology. This component is copacked with a RAPID 1 fast anti-parallel diode.

 

Key electrical characteristics include a 600V collector-emitter voltage and a continuous collector current of 80A at 25°C case temperature, and 61A at 100°C case temperature. It has a typical saturation voltage of 1.6V at 25°C junction temperature. The maximum junction temperature is rated at 175°C.

 

This IGBT is designed for applications such as drives, solar inverters, uninterruptible power supplies, and converters with medium switching frequencies. It features low VCEsat, low turn-off losses, short tail current, and low EMI. The integrated anti-parallel diode offers very soft, fast recovery.

 

The IKW50N60DTP comes in a PG-TO247-3 package suitable for through-hole mounting. It is RoHS compliant and Pb-free.

IKW50N60DTP Quick Information

Product Type: IGBT
Series: TRENCHSTOP™ Performance
Canonical Name: Infineon IKW50N60DTP DuoPack IGBT and Diode
Subcategory: Single IGBT

IKW50N60DTP Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-free lead plating

IKW50N60DTP Estimated Pricing

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1+ $3.63 $3.63

Estimated market price range - modelled values for guidance only, not live distributor offers.

IKW50N60DTP Features

  • 600V collector-emitter voltage rating.
  • 50A continuous collector current.
  • 175°C maximum junction temperature.
  • Low VCEsat and switching losses.
  • PG-TO247-3 package for through-hole mounting.

IKW50N60DTP Applications

  • Suitable for power drives.
  • Used in solar inverters.
  • Ideal for UPS systems.
  • Applicable for medium frequency converters.

IKW50N60DTP FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the IKW50N60DTP?

The maximum collector-emitter voltage is 600V.

What is the continuous collector current of the IKW50N60DTP?

The continuous collector current is 80A at 25°C case temperature and 61A at 100°C case temperature.

What is the maximum junction temperature for this IGBT?

The maximum junction temperature is 175°C.

What package type is the IKW50N60DTP supplied in?

The IKW50N60DTP is supplied in a PG-TO247-3 package.

Is the IKW50N60DTP RoHS compliant?

Yes, the IKW50N60DTP is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the IKW50N60DTP?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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