| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,603 pcs
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2603 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request | |
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1,026 pcs
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1026 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The Infineon IRFB4310ZPBF is a HEXFET Power MOSFET designed for high-efficiency applications. It features a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) of up to 127A at 25°C.
This MOSFET boasts a low typical on-resistance (Rds(on)) of 4.8mΩ at 10V gate-source voltage, minimizing conduction losses. Its rugged construction includes improved gate, avalanche, and dynamic dV/dt ruggedness, along with enhanced body diode dV/dt and dI/dt capability.
The IRFB4310ZPBF is well-suited for applications such as high-efficiency synchronous rectification in SMPS, uninterruptible power supplies, and high-speed power switching circuits. It is available in a TO-220AB package, designed for through-hole mounting.
Key electrical parameters include a maximum power dissipation of 130W at 25°C and an operating junction temperature range of -55°C to +175°C. The thermal resistance from junction to case is 0.6°C/W.
The maximum drain-source voltage (Vds) for the IRFB4310ZPBF is 100V.
The typical on-resistance (Rds(on)) for the IRFB4310ZPBF is 4.8mΩ at a gate-source voltage of 10V.
The continuous drain current (Id) for the IRFB4310ZPBF is rated at 127A at 25°C (silicon limited) and 90A at 100°C (silicon limited).
The operating junction and storage temperature range for the IRFB4310ZPBF is -55°C to +175°C.
The IRFB4310ZPBF is supplied in a TO-220-3 package.