| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,466 pcs
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3466 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale IRF9540N is a P-Channel HEXFET Power MOSFET utilizing advanced processing technology for low on-resistance and fast switching speeds. It is rated for a continuous drain current of 23A at 25°C and a drain-to-source breakdown voltage of -100V.
This MOSFET features a maximum power dissipation of 140W at 25°C and operates within a junction temperature range of -55°C to +175°C. The TO-220AB package is suitable for commercial-industrial applications and is typically mounted through-hole.
Key electrical characteristics include a static drain-to-source on-resistance of 0.117 Ohms at VGS = -10V and ID = -11A, and a gate threshold voltage between -2.0V and -4.0V. It also offers a fast switching performance with a peak diode recovery dv/dt of -5.0 V/ns.
The IRF9540N is designed for reliability and efficiency in a wide variety of applications requiring P-channel MOSFET performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous drain current is -23 A at 25°C with VGS at -10V.
The maximum power dissipation is 140 W at 25°C.
The operating junction and storage temperature range is -55 to +175 °C.
The drain-to-source breakdown voltage is -100 V.
The static drain-to-source on-resistance is 0.117 Ohms under the condition VGS = -10V, ID = -11A.
The gate threshold voltage is between -2.0 V and -4.0 V.
The IRF9540N is supplied in the TO-220AB package.