| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Storage Temperature |
The FLX207MH-12 is a Power GaAs FET manufactured by Sumitomo Electric Industries, designed for general-purpose applications within the X and Ku frequency bands. This component provides superior power, gain, and efficiency, making it suitable for demanding RF applications.
Key electrical characteristics include a typical output power of 32.5 dBm at 1dB gain compression (P1dB), a typical power gain of 7.0 dB at 1dB gain compression (G1dB), and a typical power-added efficiency (PAE) of 28%. These specifications are achieved under test conditions of VDS = 10V, IDS ≈ 0.6 IDSS, and a frequency of 12.5 GHz.
The device has absolute maximum ratings including a Drain-Source Voltage of 15V and a Gate-Source Voltage of -5V. The recommended operating conditions suggest that the drain-source operating voltage should not exceed 10 volts for reliable operation. The channel temperature should not exceed 145°C during operation, with a maximum storage temperature range of -65 to +175°C.
The FLX207MH-12 is housed in a hermetic metal/ceramic package, identified as case style MH. This packaging is suitable for surface mount applications, ensuring robust performance and reliability in various environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.20 | $1.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
15V.
12.5W.
Storage temperature range is -65 to +175°C, and maximum channel temperature is 175°C.
MH.
32.5 dBm typical.
7 dB typical.
28% typical.