| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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882 pcs
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882 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
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The FDM6296 is a single N-Channel, Logic-Level MOSFET manufactured by Fairchild Semiconductor Corporation (FAI). This device is designed for efficient switching performance, featuring a low profile MicroFET 3.3 x 3.3 mm package.
Key electrical characteristics include a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 11.5A. The static drain-source on-resistance (Rds(on)) is specified as 10.5 mΩ at a gate-source voltage (Vgs) of 10V and 15 mΩ at 4.5V Vgs. It also exhibits a low gate charge (Qg), gate discharge charge (Qgd), and gate resistance (Rg) for efficient switching.
Applications for the FDM6296 include Point of Load converters and 1/16 brick synchronous rectifiers. Its optimized balance between Rds(on) and gate charge makes it suitable for use as a high-side control switch or a low-side synchronous rectifier in power conversion systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
11.5A.
-55°C to +150°C.
MicroFET.
8.7 mΩ.
Yes, with a gate threshold voltage range of 1V to 3V.
40A.