| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
19,310 pcs
|
19310 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape Width |
The NCE30P12S is a P-Channel Enhancement Mode Power MOSFET manufactured by NCE. It utilizes advanced trench technology, providing excellent on-state resistance (RDS(ON)) and low gate charge, making it suitable for applications requiring efficient switching.
Key electrical specifications include a Drain-Source Voltage (VDS) of -30V and a continuous Drain Current (ID) of -12A at 25℃. The RDS(ON) is rated at a maximum of 13mΩ at VGS=-10V and 21mΩ at VGS=-4.5V. The device operates with gate voltages as low as 4.5V.
This MOSFET is designed for use as a load switch or in Pulse Width Modulation (PWM) applications, as well as general power management. It comes in a surface-mount SOP-8 package and is supplied on tape and reel.
Electrical characteristics include low dynamic parameters such as input capacitance (Ciss) of 2419pF, output capacitance (Coss) of 318pF, and reverse transfer capacitance (Crss) of 262pF. Switching times are also specified, with turn-on delay at 9nS and turn-off delay at 28nS.
-30V
-12A
13mΩ
-1.5V
SOP-8
RoHS3 Compliant
1 Unlimited