| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,400 pcs
|
6400 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Junction Temperature | |
| Mounting Type | |
| Quantity | |
| Tape Width |
The ROHM Semiconductor SH8KA2 is a dual N-channel Power MOSFET designed for various switching applications. It features a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) of ±8.0A. The device offers a low on-resistance, with a maximum of 28mΩ at VGS = 10V and ID = 8A.
This MOSFET is housed in a small surface mount SOP8 package, making it suitable for space-constrained designs. It operates within a junction temperature range of -55 to +150℃ and has a power dissipation of up to 2.8W.
The SH8KA2 is Pb-free and Halogen-free, indicating compliance with environmental regulations. Its electrical characteristics include input capacitance (Ciss) of 330pF and output capacitance (Coss) of 55pF, with a reverse transfer capacitance (Crss) of 44pF.
Key electrical parameters include a gate threshold voltage (Vgs(th)) between 1.0V and 2.5V. The device also specifies turn-on and turn-off delay times, as well as rise and fall times, crucial for high-speed switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the SH8KA2 is 30V.
The SH8KA2 MOSFET has a continuous drain current (Id) of ±8.0A.
The static drain-source on-state resistance (RDS(on)) is typically 23mΩ at VGS = 10V and ID = 8A.
The SH8KA2 MOSFET is supplied in an SOP8 package.
Yes, the SH8KA2 is RoHS3 Compliant.
The operating junction and storage temperature range for the SH8KA2 is -55 to +150℃.