| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,528 pcs
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3528 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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The Vishay SI9435DY is a P-Channel Logic Level PowerTrench MOSFET, produced using advanced trench technology for minimized on-state resistance and superior switching performance. This device is well-suited for low voltage and battery-powered applications requiring low in-line power loss and fast switching.
Key electrical characteristics include a drain-source voltage of -30V and a continuous drain current of -5.3A. The on-state resistance (RDS(ON)) is a maximum of 50 mΩ at VGS = -10V and 80 mΩ at VGS = -4.5V. It features a low gate charge and fast switching speed, with a total gate charge of 23 nC maximum.
Applications for the SI9435DY include DC/DC converters, load switches, and motor drives. The component is housed in a standard SO-8 package and is supplied on tape and reel with a quantity of 2500 units.
Thermal characteristics include a junction-to-ambient thermal resistance of 50 °C/W and a junction-to-case thermal resistance of 25 °C/W. The operating and storage junction temperature range is -55°C to +150°C.
The maximum drain-source voltage is -30V.
The device is housed in an SO-8 package.
The operating and storage junction temperature range is -55°C to +150°C.
The maximum continuous drain current is -5.3A.
The gate threshold voltage ranges from -1V to -3V.
The static drain-source on-resistance is 50mOhm at Vgs=-10V and 80mOhm at Vgs=-4.5V.
The maximum power dissipation is 2.5W.