Si9948AEY-T1-E3
Vishay
The Vishay Dale Si9948AEY-T1-E3 is a P-Channel Power Field-Effect Transistor. It offers a 60V drain-source voltage and a 2.6A drain current.
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29 pcs
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29 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ESM952A is a Silicon NPN Transistor from STMicroelectronics, designed for robust performance in various electronic applications. It boasts a high maximum collector-emitter voltage of 600V and can handle a maximum collector current of 24A, with a maximum power dissipation of 214W. The transistor operates within a junction temperature range of up to 200°C and an ambient operating temperature of up to 175°C.
This component is housed in a TO3 case, indicating a through-hole mounting type. It has a minimum transition frequency of 5MHz and a minimum forward current transfer ratio (hFE) of 4. The ESM952A also specifies a fall time of 0.7µs and a rise time of 0.8µs, contributing to its switching characteristics.
Key electrical parameters include a breakdown voltage (Vbr CEO) of 600V and a collector current (Icbo) of 0.4mA at maximum Vcb. The power dissipation is derated at 1.4W/°C above 25°C. The component is identified as RoHS3 Compliant, MSL Level 1, and REACH Unaffected, though these compliance statuses are unverified in the current data.
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| 1+ | $0.10 | $0.10 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the ESM952A is 600V.
The maximum continuous collector current for the ESM952A is 24A.
The ESM952A transistor has a maximum power dissipation of 214W.
The maximum operating junction temperature for the ESM952A is 200°C.
The ESM952A transistor is supplied in a TO3 case.
