| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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27,906 pcs
|
27906 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
8,694 pcs
|
8694 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,480 pcs
|
1480 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
47 pcs
|
47 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPD30N03S4L-14 is an N-channel enhancement mode power MOSFET from the OptiMOS®-T2 family. It is automotive AEC Q101 qualified and rated for a maximum operating temperature of 175°C. This device features an ultra-low Rds(on), with a maximum of 13.6 mΩ at VGS=10V and ID=30A.
The MOSFET has a drain-source breakdown voltage of 30V and a gate threshold voltage typically around 1.5V. It is designed for high-efficiency power conversion and motor control applications.
Packaged in a PG-TO252-3-11 surface-mount package, the IPD30N03S4L-14 is suitable for automated assembly processes. Its robust design and high performance characteristics make it a reliable choice for demanding automotive environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30V.
The typical gate threshold voltage is 1.5V.
The maximum on-state resistance is 13.6 mΩ.
The maximum continuous drain current is 30A.
The maximum operating temperature is 175°C.
It is supplied in the PG-TO252-3-11 package.
Yes, it is RoHS3 Compliant.