IPD30N03S4L-14 The Infineon IPD30N03S4L-14 is an N-channel OptiMOS®-T2 power MOSFET designed for automotive applications. It offers a 30V drain-source voltage and a low on-state resistance.
Mfr Part #:

IPD30N03S4L-14

Available from 4 distributors
Mfr Name: Infineon
Infineon
The Infineon IPD30N03S4L-14 is an N-channel OptiMOS®-T2 power MOSFET designed for automotive applications. It offers a 30V drain-source voltage and a low on-state resistance.
✓ Total Stock: 38,127 pcs
$ Price Range: $2.93

IPD30N03S4L-14 Available from 4 distributors

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27,906 pcs
27906 pcs On Request 1 On Request On Request 20+ On Request On Request
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8,694 pcs
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47 pcs
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IPD30N03S4L-14 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Input Capacitance
Lead Style
Mounting Type
Operating Temperature
Power Dissipation

IPD30N03S4L-14 Description

Short technical summary and product information.

The Infineon IPD30N03S4L-14 is an N-channel enhancement mode power MOSFET from the OptiMOS®-T2 family. It is automotive AEC Q101 qualified and rated for a maximum operating temperature of 175°C. This device features an ultra-low Rds(on), with a maximum of 13.6 mΩ at VGS=10V and ID=30A.

 

The MOSFET has a drain-source breakdown voltage of 30V and a gate threshold voltage typically around 1.5V. It is designed for high-efficiency power conversion and motor control applications.

 

Packaged in a PG-TO252-3-11 surface-mount package, the IPD30N03S4L-14 is suitable for automated assembly processes. Its robust design and high performance characteristics make it a reliable choice for demanding automotive environments.

IPD30N03S4L-14 Quick Information

Product Type: MOSFET
Series: OptiMOS®-T2
Canonical Name: Infineon IPD30N03S4L-14 N-channel Power MOSFET
Subcategory: Power MOSFET

IPD30N03S4L-14 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPD30N03S4L-14 Estimated Pricing

Qty Low High
1+ $2.93 $2.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD30N03S4L-14 Features

  • N-channel enhancement mode MOSFET
  • Automotive AEC Q101 qualified
  • 175°C maximum operating temperature
  • Ultra low Rds(on)
  • 100% Avalanche tested

IPD30N03S4L-14 Applications

  • Automotive motor control
  • Power management systems
  • DC-DC converters
  • High-efficiency switching applications

IPD30N03S4L-14 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the IPD30N03S4L-14?

The maximum drain-source voltage is 30V.

What is the typical gate threshold voltage of the IPD30N03S4L-14?

The typical gate threshold voltage is 1.5V.

What is the maximum on-state resistance (Rds(on)) at VGS=10V and ID=30A?

The maximum on-state resistance is 13.6 mΩ.

What is the maximum continuous drain current at 25°C?

The maximum continuous drain current is 30A.

What is the maximum operating temperature for this MOSFET?

The maximum operating temperature is 175°C.

What package type is the IPD30N03S4L-14 supplied in?

It is supplied in the PG-TO252-3-11 package.

Is the IPD30N03S4L-14 RoHS compliant?

Yes, it is RoHS3 Compliant.

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