Si9948AEY-T1-E3 The Vishay Dale Si9948AEY-T1-E3 is a P-Channel Power Field-Effect Transistor. It offers a 60V drain-source voltage and a 2.6A drain current.
Mfr Part #:

Si9948AEY-T1-E3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale Si9948AEY-T1-E3 is a P-Channel Power Field-Effect Transistor. It offers a 60V drain-source voltage and a 2.6A drain current.
✓ Total Stock: 83,523 pcs
$ Price Range: $7.19

Si9948AEY-T1-E3 Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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60,267 pcs
60267 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
23,256 pcs
23256 pcs On Request 1 On Request On Request On Request On Request On Request

Si9948AEY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Si9948AEY-T1-E3 Description

Short technical summary and product information.

The Vishay Dale Si9948AEY-T1-E3 is a P-Channel Silicon Metal-Oxide Semiconductor FET designed for power applications. It features a drain-source voltage rating of 60V and a continuous drain current of 2.6A. The transistor has an on-resistance of 0.17 Ohms.

 

This MOSFET is housed in an MS-012AA package and is suitable for surface mounting. It operates at temperatures up to 175 degrees Celsius. The component is compliant with RoHS3 standards and has a Moisture Sensitivity Level (MSL) of 1.

 

This device is suitable for various power switching and control applications where a P-channel MOSFET is required. Its specifications make it a reliable choice for designs needing moderate power handling capabilities.

Si9948AEY-T1-E3 Quick Information

Product Type: Power Field-Effect Transistor
Canonical Name: Vishay Dale Si9948AEY-T1-E3 P-Channel Power Field-Effect Transistor
Subcategory: P-Channel

Si9948AEY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

Si9948AEY-T1-E3 Estimated Pricing

Qty Low High
1+ $7.19 $7.19

Estimated market price range - modelled values for guidance only, not live distributor offers.

Si9948AEY-T1-E3 Features

  • P-Channel Silicon Metal-Oxide Semiconductor FET.
  • 60V drain-source voltage rating.
  • 2.6A continuous drain current.
  • 0.17 Ohm on-resistance.
  • MS-012AA package for surface mounting.

Si9948AEY-T1-E3 Applications

  • Power switching applications.
  • General purpose MOSFET use.
  • Control circuitry.
  • Low on-resistance designs.

Si9948AEY-T1-E3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating for the Si9948AEY-T1-E3?

The drain-source voltage rating is 60V.

What is the continuous drain current for the Si9948AEY-T1-E3?

The continuous drain current is 2.6A.

What is the on-resistance of the Si9948AEY-T1-E3?

The on-resistance is 0.17 Ohms.

What type of channel does the Si9948AEY-T1-E3 have?

It has a P-Channel.

What is the package type for the Si9948AEY-T1-E3?

The package is MS-012AA.

What is the maximum operating temperature for this MOSFET?

The maximum operating temperature is 175 degrees Celsius.

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