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TJ20S04M3L The Toshiba TJ20S04M3L is a P-Channel MOSFET with a 40V drain-to-source voltage and 20A continuous drain current. It is available in a surface mount DPAK+ package.
Mfr Part #:

TJ20S04M3L

Available from 1 distributors
Mfr Name: TSOHIBA
TSOHIBA
The Toshiba TJ20S04M3L is a P-Channel MOSFET with a 40V drain-to-source voltage and 20A continuous drain current. It is available in a surface mount DPAK+ package.
✓ Total Stock: 44,324 pcs

TJ20S04M3L Available from 1 distributor

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✓ Non-Authorised
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Optech Co.,Limited ✓
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44,324 pcs
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44324 pcs On Request 1 On Request On Request 17+ On Request On Request
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TJ20S04M3L Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Package / Case
Power Dissipation
Rds On (Max) @ Id, Vgs
SVHC Present
Tape & Reel
Technology
Vgs(th) (Max) @ Id
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TJ20S04M3L Description

Short technical summary and product information.

The Toshiba TJ20S04M3L is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 40V and a continuous drain current (Id) of 20A at 25°C.

 

The MOSFET offers a low on-resistance (Rds On) of 22.2mOhm at 10A and 10V gate drive voltage. The gate threshold voltage (Vgs(th)) is a maximum of 3V at 1mA. Input capacitance (Ciss) is rated at a maximum of 1850pF at 10V.

 

With a maximum power dissipation of 41W (Tc) and an operating temperature up to 175°C (TJ), this component is suitable for demanding environments. It utilizes Metal Oxide MOSFET technology and comes in a surface mount DPAK+ package (TO-252-3, DPak).

 

This device is RoHS3 compliant and has an MSL rating of 1.

TJ20S04M3L Quick Information

Product Type: MOSFET
Series: U-MOSVI
Canonical Name: Toshiba TJ20S04M3L P-Channel MOSFET
Subcategory: Single

TJ20S04M3L Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TJ20S04M3L Features

  • P-Channel MOSFET technology.
  • 40V drain-to-source voltage rating.
  • 20A continuous drain current capability.
  • Low 22.2mOhm maximum on-resistance.
  • Surface mount DPAK+ package.

TJ20S04M3L Applications

  • Suitable for power switching circuits.
  • Used in DC-DC converters.
  • Ideal for load management.
  • Applicable in battery powered devices.

TJ20S04M3L FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the TJ20S04M3L MOSFET?

The drain-to-source voltage (Vdss) of the TJ20S04M3L MOSFET is 40V.

What is the continuous drain current for the TJ20S04M3L at 25°C?

The continuous drain current (Id) for the TJ20S04M3L at 25°C is 20A.

What is the maximum on-resistance of the TJ20S04M3L?

The maximum on-resistance (Rds On) of the TJ20S04M3L is 22.2mOhm at 10A and 10V gate drive.

What is the operating temperature range for the TJ20S04M3L?

The TJ20S04M3L can operate at temperatures up to 175°C.

What package type is the TJ20S04M3L MOSFET supplied in?

The TJ20S04M3L MOSFET is supplied in a surface mount DPAK+ package, specifically TO-252-3, DPak (2 Leads + Tab), SC-63.

Is the TJ20S04M3L RoHS compliant?

The TJ20S04M3L is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the TJ20S04M3L?

The Moisture Sensitivity Level (MSL) for the TJ20S04M3L is 1 (Unlimited).

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