EPC2034C The EPC2034C is a 200V, 8 mΩ enhancement-mode Gallium Nitride (GaN) power transistor. It offers high performance for demanding power conversion applications.
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EPC2034C

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The EPC2034C is a 200V, 8 mΩ enhancement-mode Gallium Nitride (GaN) power transistor. It offers high performance for demanding power conversion applications.
✓ Total Stock: 4 pcs
$ Price Range: $0.99

EPC2034C Available from 1 distributor

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EPC2034C Specifications Quick View

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EPC2034C Description

Short technical summary and product information.

The EPC2034C is an enhancement-mode Gallium Nitride (GaN) power transistor from Efficient Power Conversion Corporation (EPC). It is designed for high-frequency power conversion applications, offering a drain-to-source voltage of 200V and a low on-resistance of 8 mΩ at a typical gate-to-source voltage of 5V.

 

With a continuous drain current of 48A and a pulsed drain current of 213A, the EPC2034C is suitable for applications requiring high power density and efficiency. Its operating temperature range is -40°C to 150°C, and it is supplied in a passivated die form with solder bumps, typically mounted on a board.

 

Key applications include DC-DC converters, multi-level AC/DC power supplies, wireless power transfer, solar micro-inverters, robotics, Class-D audio amplifiers, and low inductance motor drives. The GaN technology enables higher switching frequencies, lower switching losses, and zero reverse recovery losses compared to traditional silicon MOSFETs.

EPC2034C Quick Information

Product Type: GaN FET
Canonical Name: EPC2034C Enhancement Mode Power Transistor
Subcategory: GaN FET

EPC2034C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

EPC2034C Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

EPC2034C Features

  • 200V Drain-to-Source Voltage rating.
  • 48A continuous drain current at 25°C.
  • Pulsed drain current up to 213A.
  • Operating temperature range -40°C to 150°C.
  • Low 6 mΩ typical on-resistance.

EPC2034C Applications

  • High-frequency DC-DC conversion.
  • Multi-level AC/DC power supplies.
  • Wireless power transfer systems.
  • Solar micro-inverters.
  • Robotics and motor drives.

EPC2034C FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the EPC2034C?

The maximum continuous drain-to-source voltage for the EPC2034C is 200 V.

What is the typical on-resistance (RDS(on)) of the EPC2034C?

The typical drain-source on-resistance (RDS(on)) for the EPC2034C is 6 mΩ at VGS = 5 V and ID = 20 A.

What is the continuous drain current rating of the EPC2034C?

The continuous drain current rating for the EPC2034C at 25°C is 48 A.

What is the operating temperature range for the EPC2034C?

The operating temperature range for the EPC2034C is -40°C to 150°C.

What is the gate threshold voltage of the EPC2034C?

The gate threshold voltage (VGS(TH)) for the EPC2034C is typically 1.1 V.

What is the die size of the EPC2034C?

The die size of the EPC2034C is 4.6 x 2.6 mm.

EPC2034C Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
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EPC2010C
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The EPC2010C is an enhancement mode GaN FET from Efficient Power Conversion, offering 200V drain-to-source voltage and 25 mΩ on-resistance. It is designed for high-speed switching applications.
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EPC2001C
EPC2001C
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The EPC2001C is an enhancement mode GaN FET from Efficient Power Conversion, offering high efficiency and low losses. It features a 100V drain-to-source voltage and 7 mΩ on-resistance.
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EPC2012C
EPC2012C
not defined
The EPC2012C is an enhancement mode power transistor from EPC, featuring a 200V drain-to-source voltage and 5A continuous drain current. It offers ultra-high efficiency and a small footprint.
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