| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,717 pcs
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2717 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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The EPC2001C is an enhancement mode Gallium Nitride (GaN) Field-Effect Transistor (FET) from Efficient Power Conversion (EPC). Designed for high-frequency applications, it boasts ultra-high efficiency and significantly reduced switching and conduction losses due to GaN's superior electron mobility.
Key electrical specifications include a continuous drain-to-source voltage (VDS) of 100V and a low drain-source on-resistance (RDS(on)) of 7 mΩ at a gate-to-source voltage (VGS) of 5V. The continuous drain current (ID) is rated at 36A, with a pulsed capability of up to 150A. The device operates within a temperature range of -40°C to 150°C.
This GaN FET is supplied in passivated die form, suitable for surface-mount applications. Its small footprint and advanced GaN technology make it ideal for demanding applications such as high-frequency DC-DC conversion, industrial automation, synchronous rectification, Class-D audio, and low inductance motor drives. The benefits include higher switching frequencies, lower drive power, and higher power density.
EPC recommends EPC2204 for new designs, noting that the EPC2001C is an earlier generation device, though fully supported.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous drain-to-source voltage (VDS) for the EPC2001C is 100V.
The typical drain-source on-resistance (RDS(on)) is 5.6 mΩ at VGS = 5V and ID = 25A.
The continuous drain current (ID) is 36A at TA = 25°C.
The operating temperature range for the EPC2001C is -40°C to 150°C.
The EPC2001C is suitable for high-frequency DC-DC conversion, industrial automation, synchronous rectification, Class-D audio, and low inductance motor drives.
Benefits include ultra-high efficiency, ultra-low switching and conduction losses, zero QRR, and an ultra-small footprint.
The gate threshold voltage (VGS(TH)) is typically 1.4V, with a minimum of 0.8V and a maximum of 2.5V.