| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Storage Temperature |
The EPC2010C is an enhancement mode Gallium Nitride (GaN) Field-Effect Transistor (FET) from Efficient Power Conversion. It features a maximum drain-to-source voltage of 200V and a low on-resistance of 25 mΩ at typical test conditions.
This GaN FET is supplied in passivated die form with solder bars, suitable for surface mount applications. Its high electron mobility and lateral device structure contribute to ultra-high efficiency, ultra-low RDS(on), and ultra-low QG, making it beneficial for applications requiring very high switching frequencies and low on-state losses.
Key applications include high-speed DC-DC conversion, Class D audio amplifiers, and Lidar systems. The device operates within a temperature range of -40°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain-to-source voltage (VDS) for the EPC2010C is 200 V.
The typical drain-source on-resistance (RDS(on)) is 18 mΩ when VGS is 5 V and ID is 12 A.
The continuous drain current (ID) is rated at 22 A at TA = 25°C.
The operating temperature (TJ) for the EPC2010C ranges from -40°C to 150°C.
The EPC2010C is suitable for high-speed DC-DC conversion, Class D audio, and Lidar applications.
The EPC2010C is stated as RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the EPC2010C is 1 Unlimited.