| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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37 pcs
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37 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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The EPC2012C is an enhancement mode power transistor manufactured by EPC, utilizing Gallium Nitride technology. It is designed for high-frequency applications, offering a drain-to-source voltage of 200V and a continuous drain current of 5A.
Key electrical characteristics include an on-resistance (RDS(on)) of 100 mΩ at a gate-to-source voltage of 5V and a drain current of 3A. The device operates within a temperature range of -40°C to 150°C.
Applications for the EPC2012C include high-frequency DC-DC conversion, Class D audio systems, and wireless power transfer. Its benefits include ultra-high efficiency, ultra-low RDS(on), ultra-low QG, and an ultra-small footprint, making it suitable for power-dense designs.
The transistor is supplied in a passivated die form with solder bars, measuring 1.7 mm x 0.9 mm.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain-to-source voltage (VDS) for the EPC2012C is 200V.
The continuous drain current (ID) for the EPC2012C is 5A at 25°C.
The typical drain-source on-resistance (RDS(on)) is 70 mΩ at VGS = 5V and ID = 3A.
The EPC2012C operates between -40°C and 150°C.
The EPC2012C is suitable for high frequency DC-DC conversion, Class D audio, and wireless power transfer.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1.