| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The D44H8 from GE is an NPN power transistor manufactured using low voltage multi epitaxial planar technology. It is designed for general purpose linear and switching applications, including power amplifiers and switching circuits.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 60V for the D44H8/D45H8 series and 80V for the D44H11/D45H11 series. It can handle a continuous collector current (IC) of 10A and a peak collector current (ICM) of 20A. The total power dissipation (PTOT) at 25°C case temperature is 50W.
This transistor features a low collector-emitter saturation voltage (VCE(sat)) of 1V at 8A and a DC current gain (hFE) of at least 60 at 2A and 1V. The operating junction temperature (TJ) can reach up to 150°C, with storage temperatures ranging from -55°C to 150°C.
The D44H8 is supplied in a TO-220 package, typically offered in tube packaging. Its thermal resistance junction-to-case (RthJC) is 2.5°C/W, and junction-to-ambient (RthJA) is 62.5°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the D44H8 is 60V when the base current (IB) is 0.
The maximum continuous collector current (IC) for the D44H8 is 10A.
The D44H8 transistor comes in a TO-220 package.
The maximum operating junction temperature (TJ) for the D44H8 is 150°C.
The thermal resistance junction-to-case (RthJC) for the D44H8 is 2.5°C/W.
The DC current gain (hFE) of the D44H8 is a minimum of 60 at IC=2A and VCE=1V.
