| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,810 pcs
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2810 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The CMPD2004S from Central Semiconductor is a high voltage silicon switching diode manufactured using the epitaxial planar process. This component is designed for applications that require robust high voltage capabilities.
Key electrical specifications include a continuous reverse voltage rating of up to 240V and a peak repetitive reverse voltage of 300V. The average forward current is rated at 200mA, with a continuous forward current of 225mA. Its peak repetitive forward current is 625mA, and it can handle a peak forward surge current of 4.0A for 1.0μs.
The diode exhibits a typical forward voltage of 1V at 100mA and 1.25V at 200mA. Its capacitance is rated at a maximum of 5pF at VR=0 and f=1.0MHz. The reverse recovery time is specified at a maximum of 50ns under specific test conditions.
Packaged in a compact SOT-23 surface-mount case, the CMPD2004S is suitable for various electronic designs. The operating and storage junction temperature range is from -65°C to +150°C. This diode is part of a series offering different configurations, including single, dual common anode, dual common cathode, and dual in-series.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The CMPD2004S is rated for a maximum continuous reverse voltage of 240V and a peak repetitive reverse voltage of 300V.
Maximum average forward current is 200mA, with continuous forward current up to 250mA.
Forward voltage is typically 1V at 100mA and maximum 1.25V at 200mA.
The reverse recovery time is 50ns under specified test conditions (IR=IF=30mA, RL=100Ω, recover to 3.0mA).
The CMPD2004S is available in a SOT-23 surface mount package.
The junction temperature range is -65°C to +150°C.
Diode capacitance is 5pF at 0V and 1MHz.