| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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33,000 pcs
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33000 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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| Capacitance | |
| Continuous Forward Current | |
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| Thermal Resistance |
The Central Semiconductor CMPD5001 is a silicon switching diode manufactured using the epitaxial planar process. It is specifically designed for switching applications that require extremely high current capability.
This diode offers a continuous reverse voltage rating of 120V and a continuous forward current of 400mA. It also handles peak repetitive forward currents up to 800mA and peak repetitive reverse currents up to 600mA. The peak forward surge current capability is 6.0A for a 1.0μs pulse and 1.5A for a 1.0s pulse.
Electrical characteristics include a maximum forward voltage of 1.25V at 400mA and a capacitance of 35pF at VR=0 and f=1.0MHz. Reverse recovery times are specified as 60ns and 50ns under different test conditions.
The CMPD5001 is available in a SOT-23 surface mount package, making it suitable for various electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.40 | $0.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous reverse voltage is 120V.
The maximum continuous forward current is 400mA.
At 10mA, the forward voltage is 0.75V; at 50mA, 0.84V; at 100mA, 0.90V; at 200mA, 1.00V; and at 400mA, 1.25V.
The reverse recovery time is 60ns (tested at 30mA) and 50ns (tested at 10mA).
The CMPD5001 is housed in a SOT-23 surface mount package.
The peak forward surge current is 6A for a 1μs pulse and 1.5A for a 1s pulse.
The operating and storage junction temperature range is -65°C to +150°C.