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400 pcs
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400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Central Semiconductor CMPD914E is an enhanced specification, high-speed silicon switching diode packaged in a SOT-23 surface mount configuration. This diode is engineered for applications requiring rapid switching performance.
Key electrical characteristics include a maximum continuous reverse voltage of 75V and a peak repetitive reverse voltage of 120V. The continuous forward current is rated at 250mA, with a peak repetitive forward current also at 250mA. Surge current capabilities are significant, reaching up to 4000mA for short durations (1.0μs).
Electrical performance is further defined by a typical forward voltage of 0.720V at 10mA and a maximum of 0.850V. The diode exhibits a low reverse leakage current, measuring 25nA at 20V and 5μA at 75V. Its reverse recovery time is notably fast, at a maximum of 4.0ns, making it suitable for high-frequency operations. Diode capacitance is typically 2.0pF at 1MHz and 0V reverse bias.
Designed for surface mounting, the CMPD914E operates within a junction temperature range of -65°C to +150°C. Its thermal resistance is rated at 357°C/W. The SOT-23 package is standard for many compact electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The peak repetitive reverse voltage for the CMPD914E is 120V.
The continuous forward current rating for the CMPD914E is 250mA.
The reverse recovery time for the CMPD914E is a maximum of 4.0ns.
The CMPD914E diode is supplied in a SOT-23 surface mount package.
The typical forward voltage drop at 10mA for the CMPD914E is 0.720V.