| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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385 pcs
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385 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Power Dissipation | |
| Storage Temperature | |
| Thermal Resistance |
The CMPT3906 from Central Semiconductor Corp is a PNP silicon transistor manufactured using the epitaxial planar process. It is designed for small signal general purpose amplifier and switching applications. This device features a collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of 200mA, with a power dissipation (PD) of 350mW.
The transistor is housed in a compact SOT-23 surface mount package, making it suitable for space-constrained designs. Key electrical characteristics include a collector-emitter saturation voltage (VCE(SAT)) of up to 0.40V at 50mA and a DC current gain (hFE) ranging from 100 to 300 at 10mA.
With a transition frequency (fT) of 250MHz at 10mA, the CMPT3906 is capable of handling moderate frequency signals. Its operating and storage junction temperature range is -65°C to +150°C. The device is also noted as being Halogen Free by design.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the CMPT3906 is 40V.
The maximum continuous collector current (IC) for the CMPT3906 is 200mA.
The power dissipation (PD) for the CMPT3906 is 350mW.
The operating and storage junction temperature range for the CMPT3906 is -65°C to +150°C.
The CMPT3906 is supplied in a SOT-23 surface mount package.
The DC current gain (hFE) of the CMPT3906 at VCE=1.0V and IC=10mA ranges from 100 to 300.
The transition frequency (fT) for the CMPT3906 is 250MHz at VCE=20V, IC=10mA, and f=100MHz.