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59 pcs
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59 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Central Semiconductor CMPD2004S is a high-voltage silicon switching diode manufactured using the epitaxial planar process. This dual diode configuration is designed for applications requiring significant voltage handling capabilities.
Key electrical specifications include a continuous reverse voltage rating of up to 240V and a peak repetitive reverse voltage of 300V. The average forward current is rated at 200mA, with a continuous forward current of 225mA. The diode exhibits a low reverse leakage current and a fast switching speed, indicated by a reverse recovery time of 50ns.
Packaged in a compact SOT-23 surface mount case, the CMPD2004S is suitable for automated assembly processes. Its operating and storage junction temperature range is -65°C to +150°C, making it robust for various environmental conditions. The thermal resistance is 357°C/W.
This component is part of Central Semiconductor's range of discrete semiconductor solutions, offering reliable performance for demanding electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum peak repetitive reverse voltage is 250V.
The average forward current is 200mA maximum, with a continuous forward current of 250mA maximum.
The reverse recovery time is 50ns maximum under test conditions IR=IF=30mA, RL=100Ω, recovery to 3.0mA.
The CMPD2004S is available in a surface mount SOT-23 package.
The operating and storage junction temperature range is -65°C to +150°C.
The maximum diode capacitance is 5pF at VR=0V and f=1.0MHz.