Si2333DS-T1
Vishay
The Vishay Semiconductors Si2333DS-T1 is a P-Channel MOSFET with a 12V drain-source breakdown voltage and 4.1A continuous drain current. It is supplied in a SOT-23-3 package.
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7 pcs
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7 pcs | On Request | 1 | On Request | On Request | 9115/8801/9028 | On Request | On Request |
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| Power Dissipation |
The Harris Semiconductor CA3083F/3W is a general purpose, high current NPN transistor array designed for various electronic applications. This component integrates five individual NPN transistors within a single DIP package, offering space and cost efficiencies.
Key electrical specifications include a collector-emitter breakdown voltage of 15V and a minimum static current gain of 40. The device boasts a transition frequency of 450 MHz, making it suitable for moderate speed switching applications. The maximum power dissipation is rated at 750 mW, and it can handle an absolute collector current of 100 mA.
Designed for ease of use and integration, the CA3083F/3W is housed in a standard DIP package, facilitating through-hole mounting on printed circuit boards. Its robust construction and reliable performance make it a suitable choice for designers working on power supply regulation, switching circuits, and general amplification tasks.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
DIP
5
100 mA
450 MHz
750 mW
15 V
40