| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,987 pcs
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1987 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale SI2319DS-T1 is a P-Channel MOSFET designed for various electronic applications. It features a drain-source breakdown voltage of 40V and can handle a continuous drain current of 2.3A. The on-resistance is rated at 82mOhms at a gate-source voltage of 10V.
This MOSFET operates with a gate-source threshold voltage of 1V and has a maximum power dissipation of 750mW. The operating temperature range is from -55C to +150C. Key electrical characteristics include a gate-source voltage rating of 20V, a gate charge of 11.3nC, and a typical turn-on delay time of 7ns.
The SI2319DS-T1 is packaged in a SOT-23-3 surface-mount case and is supplied on a reel. Its P-Channel enhancement mode operation makes it suitable for switching and amplification circuits where a negative channel is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous drain current is 2.3A.
The drain-source breakdown voltage is 40V.
The on-resistance is 82mOhms at a gate-source voltage of 10V.
The gate-source threshold voltage is 1V.
The operating temperature range is from -55C to +150C.
The SI2319DS-T1 is supplied in a SOT-23-3 package.