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Si2333DS-T1 The Vishay Semiconductors Si2333DS-T1 is a P-Channel MOSFET with a 12V drain-source breakdown voltage and 4.1A continuous drain current. It is supplied in a SOT-23-3 package.
Mfr Part #:

Si2333DS-T1

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Semiconductors Si2333DS-T1 is a P-Channel MOSFET with a 12V drain-source breakdown voltage and 4.1A continuous drain current. It is supplied in a SOT-23-3 package.
✓ Total Stock: 1,002,541 pcs
$ Price Range: $2.81

Si2333DS-T1 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Romaks Technologies ✓
Non-Authorised Inventory information
1,000,000 pcs
On Request
1000000 pcs On Request 1 On Request On Request On Request On Request On Request
Husky International Electronic ✓
Non-Authorised Inventory information
2,541 pcs
On Request
2541 pcs On Request 1 On Request On Request N/A On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

Si2333DS-T1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
Configuration
Lead Spacing
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Power Dissipation
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Si2333DS-T1 Description

Short technical summary and product information.

The Vishay Semiconductors Si2333DS-T1 is a P-Channel MOSFET designed for various electronic applications. It features a drain-source breakdown voltage of 12V and a continuous drain current of 4.1A. The on-resistance is rated at 32mOhms, and it operates with a gate-source voltage of 8V.

 

This MOSFET has a power dissipation of 750mW and can operate within a temperature range of -55C to +150C. The component is configured as a single P-Channel MOSFET and utilizes Silicon technology with the Vishay Trenchfet tradename.

 

Packaged in a SOT-23-3 surface-mount (SMD/SMT) case, it is supplied on a reel. The factory pack quantity is 3000 units. Its compact dimensions (Height: 1.45mm, Length: 2.9mm, Width: 1.6mm) make it suitable for space-constrained designs.

Si2333DS-T1 Quick Information

Product Type: MOSFET
Series: Si2
Canonical Name: Vishay Si2333DS-T1 P-Channel MOSFET
Subcategory: P-Channel MOSFET

Si2333DS-T1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

Si2333DS-T1 Estimated Pricing

Qty Low High
1+ $2.81 $2.81

Estimated market price range - modelled values for guidance only, not live distributor offers.

Si2333DS-T1 Features

  • P-Channel MOSFET with 12V breakdown voltage.
  • Continuous drain current of 4.1A.
  • Low on-resistance of 32mOhms.
  • Operates from -55C to +150C.
  • Compact SOT-23-3 SMD package.

Si2333DS-T1 Applications

  • Suitable for general switching tasks.
  • Ideal for power management circuits.
  • Used in portable electronic devices.
  • Applicable in low-voltage systems.

Si2333DS-T1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 12V.

What is the continuous drain current?

The continuous drain current is 4.1A.

What is the on-resistance?

The on-resistance is 32mOhms.

What is the operating temperature range?

The operating temperature range is -55C to +150C.

What package type is this MOSFET in?

This MOSFET is in a SOT-23-3 package.

What is the mounting style?

The mounting style is SMD/SMT.

What is the factory pack quantity?

The factory pack quantity is 3000.

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