| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7 pcs
|
7 pcs | On Request | 1 | On Request | On Request | 99 | On Request | On Request | |
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Junction Temperature | |
| Mounting Type | |
| Noise Figure | |
| Power Dissipation | |
| SVHC Present | |
| Storage Temperature | |
| Thermal Resistance |
The HP MSA0835 is a high-performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) amplifier housed in a cost-effective microstrip package. It is designed for use as a general-purpose 50 Ohm gain block operating above 0.5 GHz, and can also function as a high-gain transistor below this frequency.
Key electrical specifications include a usable gain up to 6.0 GHz, with a typical gain of 32.5 dB at 0.1 GHz and 23.0 dB at 1.0 GHz. The noise figure is typically 3.0 dB at 1.0 GHz. The device operates with a typical voltage of 7.8 V and a typical current of 36 mA.
This MMIC is fabricated using HP's silicon bipolar MMIC process, ensuring excellent performance, uniformity, and reliability. The MSA0835 is suitable for narrow and moderate band IF and RF amplifiers in commercial and industrial applications. It comes in a 35 micro-X surface mount package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical gain is 32.5 dB at 0.1 GHz.
The typical operating voltage is 7.8 V, with a minimum of 7.0 V and a maximum of 8.4 V at 36 mA and 25°C.
It is offered in a 35 micro-X surface mount package.
The typical noise figure is 3.0 dB at 1.0 GHz.
The typical P1dB is 12.5 dBm at 1.0 GHz.
The maximum power dissipation is 750 mW at a case temperature of 25°C.