| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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119 pcs
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119 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BUV25 is a silicon multi-epitaxial mesa NPN transistor manufactured by Thomson-CSF, housed in a Jedec TO-3 metal case. It is engineered for demanding power switching applications in military and industrial equipment.
Key electrical characteristics include a collector-base voltage (Vcbo) of 400V and a collector-emitter voltage (Vcer) of 390V. The continuous collector current (Ic) is rated at 30A, with a peak collector current (Icm) of 40A. The device can dissipate up to 250W of total power at a case temperature below 25°C.
Thermal management is critical for this power transistor, with a thermal resistance junction-to-case (Rth j-case) of 0.7°C/W. The operating temperature range is from -65°C to 200°C for storage and 200°C for the junction temperature.
This transistor is suitable for applications requiring high power handling and switching capabilities. Its robust TO-3 metal package ensures effective heat dissipation.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-base voltage (Vcbo) for the BUV25 is 400V.
The continuous collector current (Ic) rating for the BUV25 is 30A.
The total power dissipation (Ptot) of the BUV25 at a case temperature below 25°C is 250W.
The BUV25 transistor is supplied in a TO-3 metal case.
The storage temperature range for the BUV25 is -65 to 200°C, and the junction temperature is 200°C.
