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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N5629 from ST is a silicon NPN power transistor housed in a TO-3 package. It is designed for applications requiring high voltage and high power amplification.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 100V and a continuous collector current (IC) of 16A, with a peak collector current (ICM) of 20A. The device can handle a total power dissipation of 200W at 25°C case temperature. Its DC current gain (hFE) ranges from 25 to 100 at IC=8A, VCE=2V, and 20 to 80 at IC=16A, VCE=2V.
With a junction temperature rating of 200°C and a low thermal resistance of 0.875°C/W, the 2N5629 is suitable for demanding thermal environments. The transistor operates within a storage temperature range of -65°C to 200°C.
This transistor is a complement to the 2N6029 and 2N6030 types, making it suitable for complementary push-pull amplifier designs. Its robust construction and specifications make it ideal for various high-power audio and industrial applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-base voltage (VCBO) of the 2N5629 is 100 V.
The maximum collector current (IC) for the 2N5629 is 16 A.
The maximum total power dissipation (PD) of the 2N5629 is 200 W at a case temperature of 25°C.
The maximum operating junction temperature (Tj) of the 2N5629 is 200 °C.
The storage temperature range (Tstg) for the 2N5629 is -65 to 200 °C.
The 2N5629 is supplied in a TO-3 package.
The 2N5629 uses through-hole mounting.