2N5886

The 2N5886 from RCA is a silicon NPN power transistor housed in a TO-3 package. It is designed for applications requiring high power dissipation, making it suitable for both power linear and switching circuits.

Key electrical characteristics include a collector-emitter voltage (VCEO) of up to 80V and a continuous collector current (IC) of 25A, with a peak collector current (ICM) of 50A. The device offers a maximum power dissipation (PD) of 200W at 25°C case temperature. Its thermal resistance from junction to case is 0.875°C/W, facilitating efficient heat management.

This transistor is a complement to the 2N5883 and 2N5884 types. Its applications are intended for power control and amplification stages where robust performance is required. The TO-3 package is known for its durability and thermal performance in high-power applications.

With a junction temperature rating of 200°C and a wide storage temperature range from -65°C to 200°C, the 2N5886 is built for demanding environments. Its switching characteristics include a typical rise time of 0.7µs, storage time of 1.0µs, and fall time of 0.8µs.