| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9 pcs
|
9 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Junction Temperature | |
| Mounting Type | |
| SVHC Present | |
| Storage Temperature |
The 2N3232 is a silicon NPN power transistor manufactured by RF, suitable for general purpose power switch and amplifier applications. It offers an excellent Safe Operating Area and a continuous collector current of up to 7.5A.
Key electrical characteristics include a Collector-Emitter Sustaining Voltage (VCEO(SUS)) of 60V minimum and a Collector-Emitter Saturation Voltage (VCE(sat)) of 2.5V maximum at 3A. The DC Current Gain (hFE) ranges from 18 to 55 at IC=3A. The transistor is housed in a TO3 package, designed for through-hole mounting.
With a maximum Collector Power Dissipation (PC) of 117W at 25°C and a junction temperature up to 200°C, this transistor is built for demanding power applications. Its thermal resistance from junction to case is 1.5°C/W, facilitating efficient heat dissipation.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 60V.
The continuous collector current is rated at 7.5A.
The maximum power dissipation is 117W at 25°C.
The DC Current Gain (hFE) is between 18 and 55 at IC=3A and VCE=10V.
The 2N3232 is housed in a TO3 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.