BSZ096N10LS5
Infineon
The Infineon BSZ096N10LS5 is an N-channel MOSFET designed for high-frequency switching applications. It offers a 100V drain-source voltage and a low on-resistance.
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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
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The Nexperia BUK7Y1R7-40H is an N-channel MOSFET utilizing Trench 9 Superjunction technology, housed in a robust LFPAK56 package. This device is fully automotive qualified to AEC-Q101 standards, making it suitable for demanding environments with a 175 °C rating.
Key electrical specifications include a drain-source voltage of 40 V, a maximum drain current of 120 A at 25°C, and a low drain-source on-state resistance (RDSon) of 1.7 mΩ at VGS = 10 V and ID = 25 A. The MOSFET also features a gate-drain charge (QGD) of 25 nC maximum.
Designed for applications such as 12 V automotive systems, motors, lamps, solenoid control, and ultra-high performance power switching, the BUK7Y1R7-40H offers improved power density and efficiency. Its LFPAK Gull Wing leads enhance board-level reliability, and the copper clip technology contributes to improved thermal performance and current capability.
| Qty | Low | High |
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| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V maximum.
120A at VGS=10V and Tmb=25°C.
1.7mΩ maximum at VGS=10V, ID=25A, Tj=25°C.
294W at Tmb=25°C.
25nC maximum at ID=25A, VDS=32V, VGS=10V.
LFPAK56 (Power-SO8) surface-mount package.