| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,433 pcs
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7433 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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The Vishay Siliconix SUM110N06-3m9h is an N-Channel Power MOSFET built with TrenchFET technology, offering robust performance at elevated temperatures. It boasts a 60V drain-source breakdown voltage and a low on-state resistance of 0.0039Ω at a gate-source voltage of 10V.
This MOSFET is rated for a continuous drain current of 110A and can operate up to a junction temperature of 175°C. Its low thermal resistance package and high threshold voltage at high temperatures make it suitable for demanding applications. The TO-263 package is designed for surface mounting.
Key electrical characteristics include a typical gate threshold voltage of 3.4V, a maximum gate-body leakage of 100nA, and a typical input capacitance of 15800pF. The device also offers a typical forward transconductance of 30S and a total gate charge of 200nC.
Applications for this MOSFET include power management, switching power supplies, and motor control where high efficiency and reliability at high temperatures are critical.
60V.
TO-263 surface-mount package.
-55°C to 175°C.
3.9mΩ at VGS=10V, ID=30A.
3.4V to 4.5V.
110A (package limited).
200nC typical, 300nC maximum.