| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
39,300 pcs
|
39300 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type |
The Infineon BSZ0901NS is a 30V N-channel MOSFET designed for high-efficiency power conversion. It features a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) of 145A at 25°C case temperature with VGS=10V, and 127A at VGS=4.5V. The device can handle pulsed drain currents up to 580A and offers single-pulse avalanche energy of 150mJ at 20A.
The MOSFET achieves an ultra-low on-resistance of 2mΩ maximum at VGS=10V and 2.6mΩ at VGS=4.5V, enabling high efficiency in low-voltage applications. The device is housed in a PG-TSDSON-8 FL surface-mount package, which provides good thermal performance and compact footprint for space-constrained designs. Mounting type is surface mount, suitable for automated assembly.
With its low RDS(on) and high current rating, the BSZ0901NS is ideal for synchronous rectification, DC-DC converters, and battery management systems. The device is lead-free and halogen-free per the datasheet, though compliance certifications are not verified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) is 30 V.
The maximum on-resistance is 2 mΩ at VGS=10V and 2.6 mΩ at VGS=4.5V.
At TC=25°C with VGS=10V, the maximum continuous drain current is 145 A. At TC=100°C it is 92 A. Alternative ratings are available at VGS=4.5V.
The device is packaged in PG-TSDSON-8 FL.
Surface mount.
The maximum pulsed drain current is 580 A at TC=25°C.
Yes, it supports single-pulse avalanche current up to 20 A and avalanche energy up to 150 mJ.