| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,578 pcs
|
2578 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type |
The Infineon Technologies BSS84P is a P-Channel, enhancement mode MOSFET from the SIPMOS family. It is rated for a drain-source breakdown voltage of -60V and a continuous drain current of -0.17A at 25°C.
Key electrical characteristics include a typical gate threshold voltage of -1.5V and a drain-source on-state resistance of 8Ω at VGS=-10V, ID=-0.17A. Dynamic characteristics such as input capacitance (Ciss) are 19pF, and output capacitance (Coss) is 15pF.
This device is avalanche rated and dv/dt rated, making it suitable for demanding applications. It is supplied in a PG-SOT-23 package, designed for surface mounting.
The BSS84P is qualified according to AEC Q101 and is halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage of the BSS84P is -60 V.
The typical gate threshold voltage for the BSS84P is -1.5 V.
The maximum continuous drain current at 25°C for the BSS84P is -0.17 A.
The typical drain-source on-resistance at VGS=-10V and ID=-0.17A is 8 Ω.
The BSS84P is supplied in a PG-SOT-23 package.
Yes, the BSS84P is halogen-free.