| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,256 pcs
|
1256 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BSS64 from Philips is an NPN Silicon AF and Switching Transistor suitable for general AF applications. It offers a high breakdown voltage with a collector-emitter voltage (VCEO) of up to 80V and a collector current (IC) of 800mA.
Key electrical characteristics include a low collector-emitter saturation voltage (VCEsat) of 0.9V at 300mA and a typical transition frequency (fT) of 100MHz at 20mA and 5V.
This transistor comes in a compact SOT23 surface-mount package, making it suitable for space-constrained designs. Its complementary type is the BSS63 PNP transistor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BSS64 is 125 V.
The BSS64 is available in a SOT23 package.
The storage temperature range for the BSS64 is -65 °C to 150 °C.
The maximum DC collector current (IC) for the BSS64 is 800 mA.
The typical transition frequency (fT) for the BSS64 is 100 MHz, measured at IC = 20 mA, VCE = 5 V, and f = 20 MHz.
