| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,460 pcs
|
2460 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,460 pcs
|
2460 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Junction Temperature | |
| Mounting Type | |
| Storage Temperature |
The Infineon BCR198W is a pre-biased bipolar transistor designed for low-power switching and signal amplification. It is housed in a compact SOT-323 surface-mount package. The device is rated for a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA, with a total power dissipation of 250 mW (at TS ≤ 124°C).
Electrical characteristics include a minimum DC current gain of 70 at IC = 5 mA, a maximum collector-emitter saturation voltage of 0.3 V at IC = 10 mA, and a transition frequency of typically 190 MHz. The input resistor R1 is specified between 32 kΩ and 62 kΩ, with an R1/R2 ratio of 0.9 to 1.1. Input on and off voltages are 1–3 V and 0.8–1.5 V respectively.
The integrated bias network simplifies circuit design by reducing the need for external resistors. This makes the BCR198W suitable for compact, space-constrained PCB layouts. The maximum junction temperature is 150 °C, and the storage temperature range is -65 °C to 150 °C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50 V.
100 mA.
SOT-323.
150 °C.
70.
R1 is 32–62 kΩ, with an R1/R2 ratio of 0.9–1.1.
250 mW at TS ≤ 124°C.
