| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,800 pcs
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2800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Junction Temperature | |
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| Power Dissipation | |
| SVHC Present | |
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The BCR22PN is a versatile NPN/PNP Silicon Digital Transistor Array from TECH PUBLIC, suitable for applications such as switching circuits, inverters, interface circuits, and driver circuits. This component integrates two galvanically isolated NPN and PNP transistors within a single SOT-363 package.
Key electrical characteristics include a Collector-Emitter Voltage (VCEO) of 50V and a DC Collector Current (IC) of 100mA. It is equipped with built-in bias resistors, R1 and R2, each typically 22 kΩ, simplifying circuit design. The device operates over a wide temperature range and is qualified according to AEC Q101.
The SOT-363 package is designed for surface mounting, making it suitable for compact electronic designs. The transistor array offers a transition frequency (fT) of 130 MHz, indicating good high-frequency performance for its class. Its robust design and integrated features make it a practical choice for various industrial and consumer electronics applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Collector-Emitter Voltage (VCEO) for the BCR22PN is 50V.
The DC Collector Current (IC) rating for the BCR22PN is 100mA.
The BCR22PN is supplied in a SOT-363 package.
The BCR22PN has built-in bias resistors, R1 and R2, each typically 22 kΩ.
The maximum junction temperature for the BCR22PN is 150°C.
The transition frequency (fT) of the BCR22PN is 130 MHz.