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BAS52-02V

The Infineon Technologies BAS52-02V is a Silicon Schottky Diode designed for medium current rectification. It offers a 45V reverse voltage and 750mA forward current.

✓ Total Stock: 33,285 pcs

$ Price Range: $0.44

BAS52-02V Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	30,000 pcs On Request	30000 pcs	On Request	1	On Request	On Request	14+15+	On Request	On Request
Hybrid Electronics ✓ Non-Authorised Inventory information	1,985 pcs On Request	1985 pcs	On Request	1	On Request	On Request	0906	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	1,300 pcs On Request	1300 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

BAS52-02V Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon Technologies
Diode Capacitance	10 pF
Forward Current	750 mA
Junction Temperature	150 °C
Mounting Type	Surface Mount
Storage Temperature	-65 ... 150 °C

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BAS52-02V Description

Short technical summary and product information.

The Infineon Technologies BAS52-02V is a Silicon Schottky Diode characterized by its medium current rectification capabilities. It features a low forward voltage at 200mA and a high reverse voltage rating of 45V.

Key electrical specifications include a maximum forward current of 750mA and an average rectified forward current of 500mA. The non-repetitive peak surge forward current is rated at 2000mA for a pulse duration of 100µs. The diode exhibits a low forward voltage, with a maximum of 530mV at 10mA, 600mV at 100mA, and 420mV at 200mA. Its reverse current is minimal, with a maximum of 10µA at 5V and 70°C, and 80µA at 10V and 85°C.

This diode operates within a junction temperature range of -65°C to 150°C and has a storage temperature range of -65°C to 150°C. The total power dissipation is limited to 500mW at a soldering point temperature of 110°C. The thermal resistance from junction to soldering point is a maximum of 60 K/W.

The BAS52-02V is supplied in an SC79 package, suitable for surface mount applications. It is qualified according to AEC Q101 standards and is Pb-free, complying with RoHS standards.

BAS52-02V Quick Information

Product Type: Silicon Schottky Diode

Series: BAS52

Canonical Name: Infineon Technologies BAS52-02V Silicon Schottky Diode

Subcategory: Schottky Diode

BAS52-02V Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

BAS52-02V Estimated Pricing

Qty	Low	High
1+	$0.44	$0.44

Estimated market price range - modelled values for guidance only, not live distributor offers.

BAS52-02V Features

Medium current rectifier Schottky diode.
Low forward voltage at 200mA.
High reverse voltage rating.
AEC Q101 qualified.
Pb-free (RoHS compliant) package.

BAS52-02V Applications

Suitable for general purpose rectification.
Used in low voltage power supplies.
Ideal for switching applications.
Applicable in high frequency circuits.

BAS52-02V FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum reverse voltage for the BAS52-02V?

The maximum reverse voltage (VR) for the BAS52-02V is 45 V.

What is the maximum forward current of the BAS52-02V?

The maximum forward current (IF) for the BAS52-02V is 750 mA.

What is the average rectified forward current?

The average rectified forward current (IFAV) for the BAS52-02V is 500 mA.

What is the typical forward voltage at 100mA?

The typical forward voltage (VF) at 100mA is 600 mV.

What is the diode capacitance at 1MHz?

The diode capacitance (CT) is a maximum of 10 pF at VR = 10 V and f = 1 MHz.

What package type is the BAS52-02V in?

The BAS52-02V is supplied in an SC79 package.

Is the BAS52-02V RoHS compliant?

Yes, the BAS52-02V is RoHS3 Compliant.