BAV170 The BAV170 is a Silicon Low Leakage Diode Array from NXP Semiconductors. It features a maximum reverse voltage of 80V and a forward current of 200mA.
Mfr Part #:

BAV170

Available from 3 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The BAV170 is a Silicon Low Leakage Diode Array from NXP Semiconductors. It features a maximum reverse voltage of 80V and a forward current of 200mA.
✓ Total Stock: 15,084 pcs
$ Price Range: $0.99

BAV170 Available from 3 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
9,989 pcs
9989 pcs On Request 1 On Request On Request 16+19+ On Request On Request
Non-Authorised Inventory information
2,560 pcs
2560 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,535 pcs
2535 pcs On Request 1 On Request On Request On Request On Request On Request

BAV170 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Diode Capacitance
Forward Current
Junction Temperature
Lead Style
Mounting Type
SVHC Present
Storage Temperature
Tape & Reel

BAV170 Description

Short technical summary and product information.

The BAV170 is a Silicon Low Leakage Diode Array manufactured by NXP Semiconductors. Designed for low-leakage applications, this diode array offers medium speed switching times.

 

Key electrical characteristics include a maximum reverse voltage of 80V and a peak reverse voltage of 85V. The forward current is rated up to 200mA, with a non-repetitive peak surge forward current of 4.5A for 1µs. The breakdown voltage is a minimum of 85V at 100µA. Reverse leakage current is a maximum of 5nA at 75V and 25°C, increasing to 80nA at 150°C.

 

Forward voltage drop varies with current, reaching a maximum of 1250mV at 150mA. Diode capacitance is typically 2pF at 1MHz and 0V. The reverse recovery time is a maximum of 1.5µs under specified test conditions.

 

This component is housed in a SOT-23 package and is suitable for surface mounting. It is qualified according to AEC-Q101 standards and is Pb-free (RoHS compliant). Standard packaging is on reels of 3,000 pieces.

BAV170 Quick Information

Product Type: Silicon Diode Array
Canonical Name: BAV170 Silicon Low Leakage Diode Array
Subcategory: Rectifier Diodes

BAV170 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BAV170 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BAV170 Features

  • Low-leakage silicon diode array.
  • Maximum reverse voltage of 80V.
  • Maximum forward current of 200mA.
  • Reverse recovery time of 1.5µs.
  • SOT-23 surface mount package.

BAV170 Applications

  • Suitable for low-leakage applications.
  • Medium speed switching applications.
  • AEC-Q101 qualified components.
  • Surface mount assembly.

BAV170 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum reverse voltage for the BAV170?

The maximum reverse voltage for the BAV170 is 80V.

What is the maximum forward current of the BAV170 diode array?

The BAV170 diode array has a maximum forward current rating of 200mA.

What is the typical capacitance of the BAV170 at 1MHz?

The typical diode capacitance for the BAV170 at 0V and 1MHz is 2pF.

What is the reverse recovery time for the BAV170?

The reverse recovery time for the BAV170 is a maximum of 1.5µs.

What package type is the BAV170 available in?

The BAV170 is available in a SOT-23 package.

Is the BAV170 RoHS compliant?

Yes, the BAV170 is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL) for the BAV170?

The Moisture Sensitivity Level (MSL) for the BAV170 is 1.

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