HZM11NB1TR-E
Hitachi
The Renesas HZM11NB1TR-E is a Zener Diode designed for voltage regulation. It features a nominal Zener voltage of 10.66V and a power rating of 200mW.
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia BSP32,115 is a PNP power bipolar transistor. It is housed in a TO-261-4, TO-261AA surface mount package, making it suitable for various electronic designs. This component offers a collector-emitter breakdown voltage of 80V and a maximum collector current of 1A. Its maximum power dissipation is rated at 1.3W, with a transition frequency of 100MHz. The DC current gain (hFE) is a minimum of 40 at 100mA and 5V. The Vce saturation is a maximum of 500mV at 50mA and 500mA, and the collector cutoff current is a maximum of 100nA. The operating temperature range extends up to 150°C.
This transistor is suitable for applications requiring a reliable power switching or amplification component. Its surface mount design facilitates automated assembly processes. The RoHS3 compliance indicates adherence to environmental standards for hazardous substances.
Key specifications include a maximum collector-emitter breakdown voltage of 80V, a maximum collector current of 1A, and a maximum power dissipation of 1.3W. The operating temperature range is up to 150°C, and it features a transition frequency of 100MHz.
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Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage for the BSP32,115 is 80V.
The maximum collector current for the BSP32,115 is 1A.
The maximum power dissipation for the BSP32,115 is 1.3W.
The transition frequency of the BSP32,115 is 100MHz.
The minimum DC current gain (hFE) for the BSP32,115 is 40 at 100mA and 5V.
The operating temperature range for the BSP32,115 is up to 150°C.
The BSP32,115 is available in a TO-261-4, TO-261AA surface mount package.
