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SSM3J358R The Toshiba SSM3J358R is a P-Channel MOSFET designed for surface mount applications. It features a 20V drain-source voltage and a continuous drain current of 6A.
Mfr Part #:

SSM3J358R

Available from 2 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba SSM3J358R is a P-Channel MOSFET designed for surface mount applications. It features a 20V drain-source voltage and a continuous drain current of 6A.
✓ Total Stock: 918,520 pcs
$ Price Range: $0.01

SSM3J358R Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Romaks Technologies ✓
Non-Authorised Inventory information
904,000 pcs
On Request
904000 pcs On Request 1 On Request On Request On Request On Request On Request
Fe Components ✓
Non-Authorised Inventory information
14,520 pcs
On Request
14520 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SSM3J358R Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Failure Rate
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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SSM3J358R Description

Short technical summary and product information.

The Toshiba SSM3J358R is a P-Channel MOSFET belonging to the U-MOSVII series. It is designed for surface mount applications and comes in a SOT-23F package. This component offers a drain-to-source voltage (Vdss) of 20V and can handle a continuous drain current (Id) of 6A at 25°C.

 

Key electrical characteristics include a maximum Rds On of 22.1mOhm at 6A and 8V, a gate threshold voltage (Vgs(th)) maximum of 1V at 1mA, and a maximum gate-source voltage (Vgs) of ±10V. The input capacitance (Ciss) is a maximum of 1331pF at 10V. The device has a power dissipation of 1W (Ta) and an operating junction temperature of up to 150°C.

 

This MOSFET is suitable for various power management applications where a P-Channel device is required. Its surface mount package facilitates integration into compact electronic designs.

SSM3J358R Quick Information

Product Type: MOSFET
Series: U-MOSVII
Canonical Name: Toshiba SSM3J358R P-Channel MOSFET
Subcategory: P-Channel MOSFET

SSM3J358R Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SSM3J358R Estimated Pricing

Qty Low High
1+ $0.01 $0.01

Estimated market price range - modelled values for guidance only, not live distributor offers.

SSM3J358R Features

  • P-Channel MOSFET technology.
  • 20V drain-to-source voltage.
  • 6A continuous drain current.
  • Surface mount SOT-23F package.
  • Operating temperature up to 150°C.

SSM3J358R Applications

  • Suitable for high-speed switching applications.
  • Ideal for power management circuits.
  • Used in motor control and driver circuits.
  • Suitable for portable electronic devices.
  • Applicable in automotive and industrial electronics.

SSM3J358R FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the SSM3J358R?

The drain-to-source voltage (Vdss) is 20V.

What is the continuous drain current for the SSM3J358R at 25°C?

The continuous drain current (Id) at 25°C is 6A.

What is the maximum Rds On for the SSM3J358R?

The maximum Rds On is 22.1mOhm at 6A and 8V.

What is the package type for the SSM3J358R?

The package type is SOT-23F.

What is the operating temperature range for this MOSFET?

The operating temperature is up to 150°C (TJ).

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